PJ6680 Description
PJ6680 25V N-Channel Enhancement Mode MOSFET.
PJ6680 Key Features
- RDS(ON), VGS@10V,IDS@12A=10mΩ
- RDS(ON), VGS@4.5V,IDS@10A=18mΩ
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Specially Designed for DC/DC Converters
- Fully Characterized Avalanche Voltage and Current
- Pb free product : 99% Sn above can meet RoHS environment substance directive request
- Case: SOIC-08 Package
- Terminals : Solderable per MIL-STD-750D,Method 1036.3
- Marking : 6680