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PJ6694 - 25V N-Channel Enhancement Mode MOSFET

Key Features

  • RDS(ON), VGS@10V,IDS@12A=12mΩ.
  • RDS(ON), VGS@4.5V,IDS@10A=22mΩ.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Specially Designed for DC/DC Converters.
  • Fully Characterized Avalanche Voltage and Current.
  • Pb free product : 99% Sn above can meet RoHS environment substance directive request.

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www.DataSheet4U.com PJ6694 25V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@12A=12mΩ • RDS(ON), VGS@4.5V,IDS@10A=22mΩ • Advanced Trench Process Techn...

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=12mΩ • RDS(ON), VGS@4.5V,IDS@10A=22mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: SOIC-08 Package • Terminals : Solderable per MIL-STD-750D,Method 1036.

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