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PJD06N03 - N-Channel Enhancement Mode MOSFET

Features

  • RDS(ON), VGS@10V,IDS@30A=6mΩ.
  • RDS(ON), VGS@4.5V,IDS@30A=9mΩ.
  • Advanced trench process technology.
  • High Density Cell Design For Uitra Low On-Resistance.
  • Specially Designed for DC/DC Converters and Motor Drivers.
  • Fully Characterized Avalanche Voltage and Current.
  • Pb free product : 99% Sn above can meet RoHS environment substance directive request.

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www.DataSheet4U.com PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), VGS@4.
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