PJD14P10A Description
PPJD14P10A 100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -14.
PJD14P10A Key Features
- RDS(ON), VGS@-10V,ID@-7A<140mΩ
- RDS(ON), VGS@-4.5V,ID@-3A<170mΩ
- High switching speed
- Improved dv/dt capability
- Low Gate Charge
- Low reverse transfer capacitance
- Lead free in pliance with EU RoHS 2011/65/EU directive
- Green molding pound as per IEC61249 Std
- Case:TO-252 Package
- Terminals: Solderable per MIL-STD-750, Method 2026