Full PDF Text Transcription for PJD50N10AL (Reference)
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PJD50N10AL. For precise diagrams, and layout, please refer to the original PDF.
PPJD50N10AL 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42 A Features RDS(ON) , VGS@10V, ID@20A<25mΩ RDS(ON) , VGS@4.5V, ID@15A<28.5mΩ Advanced Tre...
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GS@10V, ID@20A<25mΩ RDS(ON) , VGS@4.5V, ID@15A<28.5mΩ Advanced Trench Process Technology High density cell design for ultra low on-resistance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data TO-252 Case : TO-252 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0104 ounces, 0.
PJD50N10AL Datasheet
