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PJD80N06 - 60V N-Channel Enhancement Mode MOSFET

Key Features

  • RDS(ON) , VGS@10V, ID@20A.

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Full PDF Text Transcription for PJD80N06 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PJD80N06. For precise diagrams, and layout, please refer to the original PDF.

PPJD80N06 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 80 A Features  RDS(ON) , VGS@10V, ID@20A<7mΩ  High switching speed  Improved dv/dt capability  Lo...

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0V, ID@20A<7mΩ  High switching speed  Improved dv/dt capability  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case : TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0104 ounces, 0.

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