PJD9N10A Description
PPJD9N10A 100V N-Channel MOSFET Voltage 100 V Current.
PJD9N10A Key Features
- RDS(ON), VGS@10V,ID@4.5A<152mΩ
- RDS(ON), VGS@4.5V,ID@3.0A<158mΩ
- High switching speed
- Improved dv/dt capability
- Low Gate Charge
- Low reverse transfer capacitance
- Lead free in pliance with EU RoHS 2011/65/EU
- Green molding pound as per IEC61249 Std
- Case : TO-252 Package
- Terminals : Solderable per MIL-STD-750, Method 2026