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PJD9N10A - 100V N-Channel MOSFET

Key Features

  • RDS(ON), VGS@10V,ID@4.5A.

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Full PDF Text Transcription for PJD9N10A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PJD9N10A. For precise diagrams, and layout, please refer to the original PDF.

PPJD9N10A 100V N-Channel MOSFET Voltage 100 V Current 9A Features  RDS(ON), VGS@10V,ID@4.5A<152mΩ  RDS(ON), VGS@4.5V,ID@3.0A<158mΩ  High switching speed  Improved dv/...

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RDS(ON), VGS@4.5V,ID@3.0A<158mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data TO-252  Case : TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0104 ounces, 0.

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