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PJQ1900 - N-Channel Enhancement Mode MOSFET

Key Features

  • Low Voltage Drive (1.2V).
  • Advanced Trench Process Technology.
  • Specially Designed for Switch Load, PWM.

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Full PDF Text Transcription for PJQ1900 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PJQ1900. For precise diagrams, and layout, please refer to the original PDF.

PPJQ1900 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 1.2 A Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed f...

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ve (1.2V).  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: DFN 3L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00004 ounces, 0.

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