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PJQ2460 - N-Channel Enhancement Mode MOSFET

Key Features

  • RDS(ON) , VGS@10V, ID@3.2A.

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Full PDF Text Transcription for PJQ2460 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PJQ2460. For precise diagrams, and layout, please refer to the original PDF.

PPJQ2460 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 3.2A Features  RDS(ON) , VGS@10V, ID@3.2A<75mΩ  RDS(ON) , VGS@4.5V, ID@2.0A<90mΩ  Advanced Trench P...

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V, ID@3.2A<75mΩ  RDS(ON) , VGS@4.5V, ID@2.0A<90mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in comply with EU RoHS 2011/65/EU directives.  Green molding compound as per IEC61249 Std.

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