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PJX8872B - N-Channel Enhancement Mode MOSFET

Key Features

  • RDS(ON) , VGS@10V, ID@600mA.

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Full PDF Text Transcription for PJX8872B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PJX8872B. For precise diagrams, and layout, please refer to the original PDF.

PPJX8872B 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 200mA Features  RDS(ON) , VGS@10V, ID@600mA<3Ω  RDS(ON) , VGS@4.5V, ID@200mA<4Ω  Advanced Trench P...

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10V, ID@600mA<3Ω  RDS(ON) , VGS@4.5V, ID@200mA<4Ω  Advanced Trench Process Technology  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) SOT-563 Mechanical Data  Case: SOT-563 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00009 ounces, 0.

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