datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





Pan Jit International
Pan Jit International

SIC04A065NS Datasheet Preview

SIC04A065NS Datasheet

SILICON CARBIDE SCHOTTKY DIODE

No Preview Available !

SIC04A065NS pdf
SiC04A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior
Low Conduction and Switching Loss
High Surge Current Capability
Positive Temperature Coefficient on VF
Fast Reverse Recovery
Mechanical Data
Case: Molded plastic, TO-252AA
Marking: 04A065NS
Benefits
High Frequency Operation
Higher System Efficiency
Environmental Protection
Parallel Device Convenience
Hard Switching & High Reliability
High Temperature Application
TO-252AA
Unit: inch(mm)
Maximum Ratings
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave, D=0.1)
SYMBOL
VRRM
VRSM
VR
IF(AV)
IFRM
TEST CONDITIONS
TJ=25oC
TJ=25oC
TJ=25oC
TC=25oC
TC=125oC
TC=150oC
TC=25oC
TC=125oC
VALUE
650
650
650
11
6
4
26
23
UNITS
V
V
V
A
A
A
A
A
June 13,2016-REV.00
Page 1



Pan Jit International
Pan Jit International

SIC04A065NS Datasheet Preview

SIC04A065NS Datasheet

SILICON CARBIDE SCHOTTKY DIODE

No Preview Available !

SIC04A065NS pdf
SiC04A065NS
Maximum Ratings
PARAMETER
Non-Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave)
Non-Repetitive Peak Forward Surge Current
(TP=10uS, Pulse)
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction to Case
SYMBOL
IFSM
TEST CONDITIONS
TC=25oC
TC=125oC
TC=25oC
PD
TJ
TSTG
RθJC
TC=25oC
TC=125oC
VALUE
29
24
127
38
13
175
-55 to 175
4
UNITS
A
A
A
W
W
oC
oC
oC/W
Electrical Characteristics
PARAMETER
DC Blacking Voltage
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
SYMBOL
VDC
VF
IR
QC
C
TEST CONDITION
IR =100uA, TJ=25oC
IF =4A, TJ=25oC
IF =4A, TJ=175oC
VR =650V, TJ=25oC
VR =650V, TJ=175oC
IF =4A, di/dt=300A/uS,
VR =400V, TJ=25oC
VR =1V, TJ=25oC, f=1MHz
VR =200V, TJ=25oC, f=1MHz
VR =400V, TJ=25oC, f=1MHz
MIN.
650
-
-
-
-
-
-
-
-
TYP.
770
1.5
1.9
1
6
MAX.
-
1.8
2.2
50
190
UNITS
V
V
V
uA
uA
11 - nC
155 -
25 -
25 -
pF
pF
pF
June 13,2016-REV.00
Page 2


Part Number SIC04A065NS
Description SILICON CARBIDE SCHOTTKY DIODE
Maker Pan Jit International
Total Page 5 Pages
PDF Download
SIC04A065NS pdf
SIC04A065NS Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 SIC04A065ND SILICON CARBIDE SCHOTTKY DIODE Pan Jit International
Pan Jit International
SIC04A065ND pdf
2 SIC04A065NS SILICON CARBIDE SCHOTTKY DIODE Pan Jit International
Pan Jit International
SIC04A065NS pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy