SiC10A065ND Description
SiC10A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 10.
SiC10A065ND Key Features
- Temperature Independent Switching Behavior
- Low Conduction and Switching Loss
- High Surge Current Capability
- Positive Temperature Coefficient on VF
- Fast Reverse Recovery
- Case: Molded plastic, TO-263
- Marking: 10A065ND
- High Frequency Operation
- Higher System Efficiency
- Environmental Protection