SiC10A120T SILICON CARBIDE SCHOTTKY DIODE

Pan Jit International

SiC10A120T Description

SiC10A120T SILICON CARBIDE SCHOTTKY DIODE Voltage 1200 V Current 10 A .

SiC10A120T Features

* Temperature Independent Switching Behavior
* Low Conduction and Switching Loss
* High Surge Current Capability
* Positive Temperature Coefficient on VF
* Fast Reverse Recovery Mechanical Data
* Case: Molded plastic, TO-220AC
* Marking: 10A120T Benefits
* High Fre

SiC10A120T Applications

* shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further

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Datasheet Details

Part number: SiC10A120T
Manufacturer: Pan Jit International
File Size: 453.86 KB
Datasheet: SiC10A120T-PanJitInternational.pdf
Description: SILICON CARBIDE SCHOTTKY DIODE

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SILICON CARBIDE SCHOTTKY DIODE Pan Jit International

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