SiC10A120T Description
SiC10A120T SILICON CARBIDE SCHOTTKY DIODE Voltage 1200 V Current 10.
SiC10A120T Key Features
- Temperature Independent Switching Behavior
- Low Conduction and Switching Loss
- High Surge Current Capability
- Positive Temperature Coefficient on VF
- Fast Reverse Recovery
- Case: Molded plastic, TO-220AC
- Marking: 10A120T
- High Frequency Operation
- Higher System Efficiency
- Environmental Protection