• Part: 2PG011
  • Description: Silicon N-Channel Enhancement IGBT
  • Manufacturer: Panasonic
  • Size: 465.69 KB
Download 2PG011 Datasheet PDF
Panasonic
2PG011
Features - Low collector-emitter saturation voltage: VCE(sat) < 2.5 V - High-speed switching: tf = 185 ns (typ.) - Package - Code TO-220D-A1 - Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current - Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note) - : Assurance of repetitive pulse. (Repetitive period ≤ 5 ms on-duty ≤ 20%) But, it must stay within 40% of all that the time impressed pulse repetitively. T ≤ 5.0 µs, On-duty ≤ 20% - Electrical Characteristics TC = 25°C±3°C Parameter Collector-emitter voltage (E-B short) Symbol VCES ICES IGES Gate-emitter cutoff current (E-B short) Gate-emitter threshold voltage Collector-emitter saturation voltage on tin Collector-emitter cutoff current (E-B short) - VGE(th) - VCE Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Short-circuit input capacitance (mon emitter) Reverse transfer...