Transistors
2SA0719, 2SA0720 (2SA719, 2SA720)
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SC1317, 2SC1318
■ Features
• Complementary pair with 2SC1317 and 2SC1318
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SA0719
2SA0720
VCBO
−30
−60
Collector-emitter voltage 2SA0719 VCEO
(Base open)
2SA0720
−25
−50
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
−5
−500
−1
625
150
−55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage
(Emitter open)
2SA0719
2SA0720
VCBO
IC = −10 µA, IE = 0
−30
−60
V
Collector-emitter voltage
(Base open)
2SA0719
2SA0720
VCEO
IC = −10 mA, IB = 0
−25
−50
V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
V
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
− 0.1 µA
Forward current transfer ratio
hFE1 * VCE = −10 V, IC = −150 mA
85 340
hFE2 VCE = −10 V, IC = −500 mA
40
Collector-emitter saturation voltage
VCE(sat) IC = −300 mA, IB = −30 mA
− 0.35 − 0.60 V
Base-emitter saturation voltage
VBE(sat) IC = −300 mA, IB = −30 mA
−1.1 −1.5
V
Transition frequency
fT VCB = −10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240 170 to 340
Publication date: January 2003
Note) The part numbers in the parenthesis show conventional part number.
SJC00002CED
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