Panasonic Electronic Components Datasheet

2SA0720 Datasheet

Silicon PNP epitaxial planar type Transistors

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Transistors

2SA0719, 2SA0720 (2SA719, 2SA720)

Silicon PNP epitaxial planar type

For low-frequency power amplification and driver amplification

Complementary to 2SC1317, 2SC1318

■ Features

• Complementary pair with 2SC1317 and 2SC1318

■ Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol Rating

Collector-base voltage

(Emitter open)

2SA0719

2SA0720

VCBO

−30

−60

Collector-emitter voltage 2SA0719 VCEO

(Base open)

2SA0720

−25

−50

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

VEBO

ICP

Tstg

−5

−500

−1

625

150

−55 to +150

Unit

°C

5.0±0.2

Unit: mm

4.0±0.2

0.7±0.1

0.45+–00..115

2.5+–00..26

0.45+–00..115

1 23

1: Emitter

2: Collector

3: Base

EIAJ: SC-43A

TO-92-B1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter

Symbol

Conditions

Min Typ Max Unit

Collector-base voltage

(Emitter open)

2SA0719

2SA0720

VCBO

IC = −10 µA, IE = 0

−30

−60

Collector-emitter voltage

(Base open)

2SA0719

2SA0720

VCEO

IC = −10 mA, IB = 0

−25

−50

Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0

−5

Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0

− 0.1 µA

Forward current transfer ratio

hFE1 * VCE = −10 V, IC = −150 mA

85 340 

hFE2 VCE = −10 V, IC = −500 mA



Collector-emitter saturation voltage

VCE(sat) IC = −300 mA, IB = −30 mA

− 0.35 − 0.60 V

Base-emitter saturation voltage

VBE(sat) IC = −300 mA, IB = −30 mA

−1.1 −1.5

Transition frequency

fT VCB = −10 V, IE = 50 mA, f = 200 MHz

200

MHz

Collector output capacitance

(Common base, input open circuited)

Cob VCB = −10 V, IE = 0, f = 1 MHz

6 15 pF

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

hFE1

85 to 170

120 to 240 170 to 340

Publication date: January 2003

Note) The part numbers in the parenthesis show conventional part number.

SJC00002CED

Panasonic Electronic Components Datasheet

2SA0720 Datasheet

Silicon PNP epitaxial planar type Transistors

No Preview Available !

2SA0719, 2SA0720

PC  Ta

800

700

600

500

400

300

200

100

0 20 40 60 80 100 120 140 160

Ambient temperature Ta (°C)

−1 200

−1 000

IC  VCE

Ta = 25°C

−800

−600

−400

−200

IB = −1.0 mA

− 0.9 mA

− 0.8 mA

− 0.7 mA

− 0.6 mA

− 0.5 mA

− 0.4 mA

− 0.3 mA

− 0.2 mA

− 0.1 mA

0 −2 −4 −6 −8 −10 −12

Collector-emitter voltage VCE (V)

−800

−700

−600

−500

−400

−300

−200

−100

IC  IB

VCE = −10 V

Ta = 25°C

−2 −4 −6 −8

Base current IB (mA)

−10

−1

− 0.1

− 0.01

VCE(sat)  IC

IC / IB = 10

25°C

Ta = 75°C

−25°C

−100

−10

−1

− 0.1

VBE(sat)  IC

IC / IB = 10

25°C

Ta = −25°C

75°C

− 0.001

−1

−10

−100

−1 000

Collector current IC (mA)

− 0.01

−1

−10

−100

−1 000

Collector current IC (mA)

hFE  IC

600

VCE = −10 V

500

400

300

Ta = 75°C

200 25°C

−25°C

100

− 0.01

− 0.1

−1

Collector current IC (A)

−10

fT  IE

240

VCB = −10 V

Ta = 25°C

200

160

120

1 10 100

Emitter current IE (mA)

Cob  VCB

IE = 0

f = 1 MHz

Ta = 25°C

−1 −10 −100

Collector-base voltage VCB (V)

−120

−100

VCER  RBE

IC = −2 mA

Ta = 25°C

−80

−60

2SA0720

−40

2SA0719

−20

1 10 100 1 000

Base-emitter resistance RBE (kΩ)

2 SJC00002CED

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2SA0720 Datasheet

Silicon PNP epitaxial planar type Transistors

2SA0720 Datasheet

Silicon PNP epitaxial planar type Transistors

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