Transistors
2SA0777 (2SA777)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC1509
■ Features
• High collector-emitter voltage (Base open) VCEO
• Optimum for the driver stage of a low-frequency and 25 W to 30 W
output amplifier.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−80
−80
−5
− 0.5
−1
1
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1 : Emitter
123
2 : Collector
3 : Base
2.54±0.15
EIAJ : SC-51
TO-92L-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−80
Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0
−80
Emitter-base voltage (Collector open) VEBO IE = −1 µA, IC = 0
−5
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
− 0.1
Forward current transfer ratio *1
hFE1 *2 VCE = −10 V, IC = −150 mA
90
220
hFE2 VCE = −5 V, IC = −500 mA
50 100
Collector-emitter saturation voltage
VCE(sat) IC = −500 mA, IB = −50 mA
− 0.2 − 0.4
Base-emitter saturation voltage
VBE(sat) IC = −500 mA, IB = −50 mA
− 0.85 −1.2
Transition frequency
fT VCB = −10 V, IE = 50 mA, f = 200 MHz
120
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
11 20
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Palse measurement
*2: Rank classification
Rank
Q
R
hFE1
90 to 155
130 to 220
Publication date: November 2002
Note) The part number in the parenthesis shows conventional part number.
SJC00004BED
1
