Transistors
2SA0838 (2SA838)
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC1359
■ Features
• High transfer ratio fT
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
−30
−20
−5
−30
250
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Base-emitter saturation voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance
(Common-emitter)
VBE
ICBO
ICEO
IEBO
hFE
VCE(sat)
fT
NF
Zrb
Cre
VCE = −10 V, IC = −1 mA
VCB = −10 V, IE = 0
VCE = −20 V, IB = 0
VEB = −5 V, IC = 0
VCE = −10 V, IC = −1 mA
IC = −10 mA, IB = −1 mA
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 1 mA, f = 5 MHz
VCE = −10 V, IC = −1 mA, f = 2 MHz
VCE = −10 V, IC = −1 mA, f = 10.7 MHz
70
150
− 0.7
− 0.1
300
2.8
22
1.2
− 0.1
−100
−10
220
4.0
50
2.0
V
µA
µA
µA
V
MHz
dB
Ω
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
B
C
hFE
70 to 140
110 to 220
Publication date: March 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00005BED
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