Transistor
2SA1487
Silicon PNP epitaxial planer type
For video amplifier
s Features
q High transition frequency fT.
q Small collector output capacitance Cob.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–85
–85
–4
–100
–50
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICEO
VCBO
VCE = –60V, IB = 0
IC = –100µA, IE = 0
–10 µA
–85 V
Collector to emitter voltage
Emitter to base voltage
VCEO
VEBO
IC = 1mA, IB = 0
IE = –100µA, IC = 0
–85
–4
V
V
Forward current transfer ratio
hFE
VCE = –5V, IC = –10mA
60
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
– 0.5
V
Transition frequency
fT VCB = –5V, IE = 10mA, f = 200MHz 500 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
2.7 pF
1
Free Datasheet http://www.datasheet4u.com/
