• Part: 2SC4655J
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 215.36 KB
Download 2SC4655J Datasheet PDF
Panasonic
2SC4655J
Features - Optimum for RF amplification, oscillation, mixing, and IF of 1.60+- 00..0035 1.00±0.05 0.80±0.05 Unit: mm 0.12+- 00..0013 (0.375) 0.85- +00..0035 1.60±0.05 5˚ FM/SAM radios - SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 12 0.27±0.02 (0.50)(0.50) (0.80) / - Absolute Maximum Ratings Ta = 25°C 5˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 0 to 0.02 0.70- +00..0035 V c e. d ty Collector-emitter voltage (Base open) VCEO 0.10 max. n d stag tinue Emitter-base voltage (Collector open) VEBO V a e cle con Collector current 30 m A lifecy , dis Collector power dissipation 125 m W n u duct typed Junction temperature Tj °C te tin Pro ed Storage temperature Tstg - 55 to +125 °C 1 : Base 2 : Emitter 3 : Collector Marking Symbol: K EIAJ : SC-89 SSMini3-F1 Package in n s followlianngefdoudriscontinu - Electrical Characteristics Ta = 25°C ±...