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2SC4691J - Silicon NPN Transistor

Key Features

  • 3 (0.375) 0.85.
  • +00..0035 1.60±0.05 5˚.
  • Low collector-emitter saturation voltage VCE(sat).
  • SS-Mini type package, allowing downsizing of the equipment and 12 (0.80) automatic insertion through the tape packing 0.27±0.02 (0.50)(0.50).
  • Absolute Maximum Ratings Ta = 25°C 5˚ / Parameter Symbol Rating Unit 0 to 0.02 0.70.
  • +00..0035 e Collector-base voltage (Emitter open) VCBO 40 V 0.10 max. pe) Collector-emitter voltage (E-B short) VCES 40 V.

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Transistors 2SC4691J Silicon NPN epitaxial planar type 0.80±0.05 For high-speed switching 1.60+–00..0035 1.00±0.05 Unit: mm 0.12+–00..0013 ■ Features 3 (0.375) 0.85–+00..0035 1.60±0.05 5˚ • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and 12 (0.80) automatic insertion through the tape packing 0.27±0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C 5˚ / Parameter Symbol Rating Unit 0 to 0.02 0.70–+00..0035 e Collector-base voltage (Emitter open) VCBO 40 V 0.10 max. pe) Collector-emitter voltage (E-B short) VCES 40 V nc d ge.