• Part: 2SC5813
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 213.59 KB
Download 2SC5813 Datasheet PDF
Panasonic
2SC5813
Features - Low collector-emitter saturation voltage VCE(sat) - Mini type package, allowing downsizing of the equipment and 0.40+- 00..0150 3 0.16+- 00..0160 0.4±0.2 1.50- +00..0255 2.8- +00..32 automatic insertion through the tape packing (0.95) (0.95) 5˚ (0.65) 1.9±0.1 / - Absolute Maximum Ratings Ta = 25°C 2.90+- 00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO V c e. d ty Collector-emitter voltage (Base open) VCEO V n d stag tinue Emitter-base voltage (Collector open) VEBO 0 to 0.1 1.1- +00..12 1.1- +00..13 V a e cle con Collector current A lifecy , dis Peak collector current A n u duct typed Collector power dissipation - PC 600 m W te tin Pro ed Junction temperature Tj °C ur tinu Storage temperature Tstg - 55 to +150 °C ing fo iscon Note) - : Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm Marking Symbol:...