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2SD2209 Datasheet

Silicon NPN triple diffusion planar type Darlington

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Power Transistors
2SD2209
Silicon NPN triple diffusion planar type Darlington
For power amplification and switching
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s Features
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Ratings
100±15
100±15
5
8
4
15
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2*1
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
VBE(sat)
fT
ton
tstg
tf
Es/b*2
Conditions
VCB = 85V, IE = 0
VEB = 5V, IC = 0
IC = 5mA, IB = 0
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
IC = 3A, IB = 12mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V
IC = 1A, L = 100mH, RBE = 100
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
85
1000
1000
typ max Unit
100 µA
2 mA
115 V
10000
2
V
4
2.5 V
20 MHz
0.3 µs
3.0 µs
1.0 µs
50 mJ
*1hFE2 Rank classification
Rank
Q
P
hFE2 1000 to 5000 2000 to 10000
*2Es/b Test circuit
Vin
tW
T.U.T
IB1
IC
–IB2
L coil
VCC
Vclamp
Internal Connection
C
B
E
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Panasonic Electronic Components Datasheet

2SD2209 Datasheet

Silicon NPN triple diffusion planar type Darlington

No Preview Available !

Power Transistors
25
20
(1)
15
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
10
5
(2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=250
30
10
3
TC=–25˚C
1 25˚C
100˚C
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
IC — Lcoil
100
30
10
3
1
0.3
0.1
1 3 10 30 100
Load inductance Lcoil (mH)
IC — VCE
6
TC=25˚C
5
4
IB=2mA 1mA
0.75mA
0.5mA
3 0.15mA
2 0.1mA
1
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2209
VCE(sat) — IC
10
IC/IB=250
3
25˚C
1 TC=–25˚C
100˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
100000
hFE — IC
30000 TC=100˚C
10000
3000
25˚C
–25˚C
VCE=3V
1000
300
100
0.1
0.3 1 3
Collector current IC (A)
10
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
1 3 10 30 100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
10 ICP
IC
1 300ms
t=1ms
10ms
0.1
0.01
1
10 100 1000
Collector to emitter voltage VCE (V)
2
Downloaded from Elcodis.com electronic components distributor
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Part Number 2SD2209
Description Silicon NPN triple diffusion planar type Darlington
Maker Panasonic
Total Page 4 Pages
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