2SK2960 fet equivalent, silicon n-channel power f-mos fet.
q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondary breakdown
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 .
13.7
–0.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1
2.6±0.1
0.7±0.1
s Absolute Maximum Ratings (TC = 25°C)
P.
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