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Power MOSFETs
2SK3628
Silicon N-channel power MOSFET
For hihg-speed switching
15.0±0.3 11.0±0.2
Unit: mm
5.0±0.2 (3.2)
(0.7)
■ Features
• Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability *
VDSS VGSS
ID IDP EAS
230 ±30 20 80 570
V V A A mJ
Power
dissipation
Ta = 25°C
Channel temperature
Storage temperature
PD 100 3
Tch 150 Tstg −55 to +150
W
°C °C
Note) *: L = 2.23 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C
16.2±0.5 (3.2) (2.3)
Solder Dip
21.0±0.5 15.0±0.2
φ 3.2±0.1
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
5.45±0.3 10.9±0.
2SK3628 Datasheet
