* Gate-source surrender voltage VGSS : ± 30 guaranteed
* Avalanche energy capacity guaranteed: EAS > 986 mJ
* High-speed switching: tf = 39 ns
* Package
* Code TO-220D-A1
* Pin Name 1: Gate 2: Drain 3: Source Parameter Symbol VDSS VGSS ID IDP Drain-s
2SK3892
Panasonic
297.67 KB
Silicon n-channel power mosfet.
This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving ci.
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