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2SK3892 Datasheet Silicon N-channel Power MOSFET

Manufacturer: Panasonic

Overview: This product complies with the RoHS Directive (EU 2002/95/EC).

Key Features

  • s.
  • Gate-source surrender voltage VGSS : ± 30 guaranteed.
  • Avalanche energy capacity guaranteed: EAS > 986 mJ.
  • High-speed switching: tf = 39 ns.
  • Package.
  • Code TO-220D-A1.
  • Pin Name 1: Gate 2: Drain 3: Source Parameter Symbol VDSS VGSS ID IDP Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability.
  • Drain power dissipation Junction temperature Storage temperature EAS PD Tj.

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