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AQW614EH Datasheet PhotoMOS RELAYS

Manufacturer: Panasonic

Overview: Both NO and NC contacts incorporated in a compact DIP8-pin Reinforced insulation VDE (AQW610EH, 614EH) (AQW612EH) GE 1 Form A & 1 Form B (AQW61❍EH) 9.78 .385 6.4 .252 3.9 .154 9.78 .385 6.4 .252 3.6 .142 mm inch 18 N.C. 27 36 45 N.O.

Download the AQW614EH datasheet PDF. This datasheet also includes the AQW612EH variant, as both parts are published together in a single manufacturer document.

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Key Features

  • 1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2 the space compared with the mounting area of a set of 1 Form A and 1 Form B PhotoMOS 4. Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use 5. Controls low-level analog signals PhotoMOS feature extremely low.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Etc AQW614 GU (General Use) Type [2-Channel (Form A Form B) Type] Etc
Etc AQW614A GU (General Use) Type [2-Channel (Form A Form B) Type] Etc

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