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AQZ102 - PhotoMOS RELAY

Key Features

  • 1. Slim SIL4-pin package (W) 3.5 × (D) 21.0 × (H) 12.5 mm (W) .138 × (D) .827 × (H) .492 inch The compact size of the 4-pin SIL package allows high density mounting. 2. Extremely low on-resistance 3. Control low-level signal Power PhotoMOS feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 4. Low-level off state leakage current of max. 10 μA 5. High I/O isolation voltage of 2,500 V 6. Eliminates the need for a counter electromoti.

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Other Datasheets by Panasonic

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Slim type with high capacity up to 4A DC load type also available Power 1 Form A (AQZ10❍, 20❍) 21 .827 3.5 .138 12.5 .492 (Height includes standoff) mm inch 12 3− DC type 4+ 12 3 4 AC/DC type RoHS compliant FEATURES 1. Slim SIL4-pin package (W) 3.5 × (D) 21.0 × (H) 12.5 mm (W) .138 × (D) .827 × (H) .492 inch The compact size of the 4-pin SIL package allows high density mounting. 2. Extremely low on-resistance 3. Control low-level signal Power PhotoMOS feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 4. Low-level off state leakage current of max. 10 μA 5. High I/O isolation voltage of 2,500 V 6. Eliminates the need for a counter electromotive protection diode in the drive circuit on the input side 7.