Overview: Power Transistors 2SB967
Silicon PNP epitaxial planar type
Unit: mm For low-frequency power amplification
7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings
Parameter Collector to base voltage www.DataSheet4U.com Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 (Ta=25˚C)
Ratings –27 –18 –7 –8 –5 20 150 –55 to +150 Unit V V V A A W
0.6 2.3 2.3 0.75 6.5±0.2 5.35 4.35 1:Base 2:Collector 3:Emitter U Type Package Unit: mm ˚C ˚C
1 2 3
2.3±0.1 0.5±0.1 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
*h (TC=25˚C)
Symbol ICBO IEBO VCEO VEBO hFE fT Cob
* Conditions VCB = –10V, IE = 0 VEB = –5V, IC = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –2A IC = –3A, IB = – 0.1A VCB = –6V, IE = 50mA, f = 200MHz VCB = –20V, IE = 0, f = 1MHz min typ max –100 –1 6.0 5.5±0.2 13.3±0.3 1.8 1.0± 0.
