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B1155 - 2SB1155

Key Features

  • q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VC.

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Full PDF Text Transcription for B1155 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for B1155. For precise diagrams, and layout, please refer to the original PDF.

Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 21.0±0.5 16.2±0....

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1706 21.0±0.5 16.2±0.