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B1255 - 2SB1255

Key Features

  • q Optimum for 90W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <.
  • 2.5V q Full-pack package which can be installed to the heat sink with one screw 21.0±0.5 15.0±0.3 11.0±0.2 φ3.2±0.1 5.0±0.2 3.2 2.0±0.2 2.0±0.1 Solder Dip 16.2±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit 1.1±0.1 5.45±0.3 10.9±0.5 0.6±0.2 Collector to base voltage Collector to emitter voltage Emitter to.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 Unit: mm 12.5 3.5 15.0±0.2 0.7 s Features q Optimum for 90W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V q Full-pack package which can be installed to the heat sink with one screw 21.0±0.5 15.0±0.3 11.0±0.2 φ3.2±0.1 5.0±0.2 3.2 2.0±0.2 2.0±0.1 Solder Dip 16.2±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit 1.1±0.1 5.45±0.3 10.9±0.5 0.6±0.