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Panasonic Electronic Components Datasheet

C1847 Datasheet

2SC1847

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C1847 pdf
Power Transistors
2SC1847
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0886
Features
Output of 4 W can be obtained by a complementary pair with
2SA0886
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
50
40
5
1.5
3
1.2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
IC = 1 mA, IE = 0
IC = 2 mA, IB = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 1 A
IC = 2 A, IB = 0.2 A
IC = 2 A, IB = 0.2 A
VCB = 5 V, IE = − 0.5 A, f = 200 MHz
VCB = 20 V, IE = 0, f = 1 MHz
Min Typ Max Unit
50 V
40 V
1 µA
100 µA
10 µA
80 220
1V
1.5 V
150 MHz
35 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
80 to 160
120 to 220
Publication date: February 2003
SJD00095BED
1


Panasonic Electronic Components Datasheet

C1847 Datasheet

2SC1847

No Preview Available !

C1847 pdf
2SC1847
PC Ta
1.6
1.2
0.8
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
4.0
TC=25˚C
3.5
IB=40mA
3.0 35mA
30mA
2.5 25mA
2.0 20mA
15mA
1.5
10mA
1.0
5mA
0.5
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE(sat) IC
IC/IB=10
1
TC=100˚C
25˚C
0.1 –25˚C
0.01
0.001
0.01
0.1 1
Collector current IC (A)
VBE(sat) IC
IC/IB=10
10
1000
1 TC=–25˚C
100˚C
25˚C
0.1
100
10
hFE IC
VCE=5V
TC=100˚C
25˚C
–25˚C
0.01
0.01
0.1 1
Collector current IC (A)
1
0.01 0.1
1
Collector current IC (A)
fT IE
240
VCB=5V
f=200MHz
TC=25˚C
200
160
120
80
40
0
0.01
0.1 1
Emitter current IE (A)
10
Cob VCB
120
IE=0
f=1MHz
TC=25˚C
100
80
60
40
20
0
1 10 100
Collector-base voltage VCB (V)
VCER RBE
60
TC=25˚C
50
40
30
20
10
0
0.001 0.01
0.1
1
10
Base-emitter resistance RBE (k)
ICBO Ta
1000
VCB=20V
100
10
1
0 20 40 60 80 100
Ambient temperature Ta (°C)
2 SJD00095BED


Part Number C1847
Description 2SC1847
Maker Panasonic
Total Page 4 Pages
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