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Panasonic Electronic Components Datasheet

C1953 Datasheet

2SC1953

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C1953 pdf
Power Transistors
2SC1953
Silicon NPN epitaxial planar type
For audio system/pre-drive
Complementary to 2SA0914
Features
High collector-emitter voltage (Base open) VCEO
Small collector output capacitance (Common base, input open cir-
cuited) Cob
A complementary pair with 2SA0914, is optimum for the pre-driver
stage of a 60 W to 100 W output amplifier
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
150
150
5
50
100
1
150
55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCEO
VEBO
ICBO
hFE
VCE(sat)
fT
Cob
IC = 100 µA, IB = 0
IE = 10 µA, IC = 0
VCB = 100 V, IE = 0
VCE = 5 V, IC = 10 mA
IC = 30 mA, IB = 3 mA
VCB = 10 V, IE = −10 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
150
5
130
70
V
V
1 µA
330
1V
MHz
3 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE 130 to 220 185 to 330
Publication date: January 2003
SJD00096BED
1


Panasonic Electronic Components Datasheet

C1953 Datasheet

2SC1953

No Preview Available !

C1953 pdf
2SC1953
PC Ta
1.2
Without heat sink
1.0
0.8
0.6
0.4
0.2
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VBE
120
VCE=10V
100
25˚C
TC=100˚C –25˚C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
100
IC/IB=10
10
1
25˚C
0.1 TC=100˚C
–25˚C
0.01
0.1
1 10
Collector current IC (A)
100
100000
10000
hFE IC
VCE=10V
1000
100
TC=100˚C
–25˚C
25˚C
10
0.1 1 10 100
Collector current IC (mA)
fT IE
300
VCB=10V
f=200MHz
TC=25˚C
250
200
150
100
50
0
1 10 100
Emitter current IE (mA)
Cob VCB
5
IE=0
f=1MHz
TC=25˚C
4
3
2
1
0
1 10 100
Collector-base voltage VCB (V)
2 SJD00096BED


Part Number C1953
Description 2SC1953
Maker Panasonic
Total Page 3 Pages
PDF Download
C1953 pdf
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