High collector-emitter voltage (Base open) VCEO
3.05±0.1.
High transition frequency fT.
TO-126B package which requires no insulation plate for installation to the heat sink
1.9±0.1 16.0±1.0.
Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
250
V
pe) Collector-emitter voltage (Base open) VCEO
250
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
C2258. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8...
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l amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8±0.3 11.0±0.5 • High collector-emitter voltage (Base open) VCEO 3.05±0.1 • High transition frequency fT • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 250 V pe) Collector-emitter voltage (Base open) VCEO 250 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 7 V sta tinu Collector current IC 100 mA a e cle con Peak collector current n u duct lifetcyyped, dis Collector power diss
C2258 Datasheet
