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Panasonic Electronic Components Datasheet

C2258 Datasheet

2SC2258

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C2258 pdf
Power Transistors
2SC2258www.DataSheet4U.com
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification
Features
High collector-emitter voltage (Base open) VCEO
High transition frequency fT
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
250
250
7
100
150
1.2 *1
4 *2
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Note) *1: Without heat sink
*2 :With a 100 × 100 × 2 mm Al heat sink
Unit
V
V
V
mA
mA
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-emitter cutoff current
(Resistor between B and E)
VEBO
VBE
ICER
IE = 0.1 mA, IC = 0
VCE = 20 V, IC = 40 mA
VCE = 250 V, RBE = 100 k
7V
1.2 V
100 µA
Forward current transfer ratio
hFE1 VCE = 20 V, IC = 40 mA
40
hFE2 VCE = 50 V, IC = 5 mA
30
Collector-emitter saturation voltage
VCE(sat) IC = 50 mA, IB = 5 mA
1.2 V
Transition frequency
fT VCB = 10 V, IE = −10 mA, f = 200 MHz
100
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 50 V, IE = 0, f = 1 MHz
3.0 4.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00098BED
1


Panasonic Electronic Components Datasheet

C2258 Datasheet

2SC2258

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C2258 pdf
2SC2258
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PC
Ta
5
(1)
4
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
3
2
(2)
1
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
120
TC=25˚C
100
1.8mA IB=2.0mA
1.6mA
1.4mA
80 1.2mA
1.0mA
0.8mA
60
0.6mA
0.4mA
40
0.2mA
20
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
IC VBE
120
VCE=10V
100
25˚C
TC=100˚C –25˚C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
IC IB
120
VCE=10V
TC=25˚C
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base current IB (mA)
VCE(sat) IC
100
IC/IB=10
10
1
25˚C
TC=100˚C
0.1
–25˚C
0.01
0.1
1 10
Collector current IC (A)
100
IB VBE
3.0
VCE=10V
TC=25˚C
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0
Base-emitter voltage VBE (V)
hFE IC
240
VCE=10V
200
160 TC=100˚C
120
25˚C
80
–25˚C
40
0
0.01 0.1
1
Collector current IC (mA)
10
fT IE
160
VCB=10V
f=200MHz
TC=25˚C
120
80
40
0
1 10 100
Emitter current IE (mA)
Cob VCB
10
IE=0
f=1MHz
TC=25˚C
8
6
4
2
0
1 10 100
Collector-base voltage VCB (V)
2 SJD00098BED


Part Number C2258
Description 2SC2258
Maker Panasonic
Total Page 3 Pages
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C2258 pdf
C2258 Datasheet PDF
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