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Transistors
2SC2778
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
■ Features • Optimum for RF amplification, oscillation, mixing, and IF of
0.40+–00..0150 3
0.16+–00..0160
0.4±0.2
1.50–+00..0255 2.8–+00..32
FM/AM radios
• Mini type package, allowing downsizing of the equipment and
5˚
automatic insertion through the tape packing and the magazine
1
2
(0.65)
packing
(0.95) (0.95)
/ ■ Absolute Maximum Ratings Ta = 25°C
1.9±0.1 2.90+–00..0250
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
5
0 to 0.1 1.1–+00..12 1.1–+00..
C2778 Datasheet
