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C3506 - Silicon NPN Transistor

Features

  • 11.0±0.2 (3.2).
  • High-speed switching 21.0±0.5 15.0±0.2.
  • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1.
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1.
  • Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.6±0.2 / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip e Collector-base voltage (Emitter open) VCBO 1 000 V c type) Co.

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Datasheet Details

Part number C3506
Manufacturer Panasonic
File Size 257.33 KB
Description Silicon NPN Transistor
Datasheet download datasheet C3506 Datasheet
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Full PDF Text Transcription

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Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm 15.0±0.3 5.0±0.2 (0.7) ■ Features 11.0±0.2 (3.2) • High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1 ■ Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.6±0.2 / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip e Collector-base voltage (Emitter open) VCBO 1 000 V c type) Collector-emitter voltage (E-B short) VCES 1 000 V n d ge.
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