900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Panasonic Electronic Components Datasheet

C3507 Datasheet

2SC3507

No Preview Available !

Power Transistors
2SC3507
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Features
High-speed switching
High collector-base voltage (Emitter open) VCBO
Satisfactory linearity of forward current transfer ratio hFE
Full-pack package which can be installed to the heat sink with one
screw
www.DataSheetA4Ub.scomlute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Base current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VCEO
VEBO
IC
IB
ICP
PC
Tj
Tstg
1 000
1 000
800
7
5
3
10
80
3.0
150
55 to +150
Unit
V
V
V
V
A
A
A
W
°C
°C
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter sustaining voltage * VCEO(SUS) IC = 0.5 A, L = 50 mH
Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0
Forward current transfer ratio
hFE VCE = 5 V, IC = 3 A
Collector-emitter saturation voltage
VCE(sat) IC = 3 A, IB = 0.6 A
Base-emitter saturation voltage
VBE(sat) IC = 3 A, IB = 0.6 A
Transition frequency
fT VCE = 5 V, IC = 0.5 A, f = 1 MHz
Turn-on time
ton IC = 3 A
Storage time
tstg IB1 = 0.6 A, IB2 = −1.2 A
Fall time
tf VCC = 250 V
800 V
50 µA
50 µA
6
1.5 V
1.5 V
6 MHz
1.0 µs
2.5 µs
0.5 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: VCEO(SUS) test circuit 50 Hz/60 Hz
mercury relay
X
L
120
6V
Y
1
15 V
G
Publication date: February 2003
SJD00106BED
1


Panasonic Electronic Components Datasheet

C3507 Datasheet

2SC3507

No Preview Available !

2SC3507
100
(1)
80
60
PC Ta
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(PC=3W)
40
20 (2)
(3)
0
0 25 50 75 100 125 150
www.DataSheet4U.coAmmbient temperature Ta (°C)
IC VCE
10
TC=25˚C
8
6 IB=800mA
500mA
4 400mA
300mA
200mA
2 100mA
20mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
100
IC/IB=5
10
TC=100˚C
1
25˚C
–25˚C
0.1
0.01
0.01
0.1 1
Collector current IC (A)
10
VBE(sat) IC
100
IC/IB=5
10
1 TC=–25˚C
25˚C
100˚C
0.1
1 000
hFE IC
VCE=5V
100
TC=100˚C
10 –25˚C
25˚C
1
1 000
100
10
1
fT IC
VCE=5V
f=1MHz
TC=25˚C
0.01
0.01
0.1 1
Collector current IC (A)
10
0.1
0.01
0.1 1
Collector current IC (A)
10
0.1
0.01
0.1 1
Collector current IC (A)
10
ton , tstg , tf IC
10
tstg
1
ton
0.1
0.01
0
tf
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
(2IB1=–IB2)
VCC=250V
TC=25˚C
1234567
Collector current IC (A)
8
Safe operation area
100
Non repetitive pulse
TC=25˚C
10 ICP
IC
t=10ms
1
DC
t=1ms
0.1
0.01
1
10 100 1 000
Collector-emitter voltage VCE (V)
2 SJD00106BED


Part Number C3507
Description 2SC3507
Maker Panasonic
PDF Download

C3507 Datasheet PDF






Similar Datasheet

1 C350 Phase Control SCR 115 Amperes Avg 500-1300 Volts
Powerex Power Semiconductors
2 C3500 Silicon Power Transistor
ETC
3 C3502 2SC3502
Sanyo Semicon Device
4 C3503 2SC3503
Sanyo Semicon Device
5 C3504 2SC3504
Sanyo Semicon Device
6 C3505 2SC3505
SavantIC
7 C3507 2SC3507
Panasonic





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy