• Part: C3811
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 221.27 KB
Download C3811 Datasheet PDF
Panasonic
C3811
Features - Low collector-emitter saturation voltage VCE(sat) 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 0.7±0.2 12.9±0.5 0.7±0.1 - Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 0.45+- 00..115 0.45+- 00..115 e Collector-emitter voltage (E-B short) VCES V c type) Emitter-base voltage (Collector open) VEBO V n d ge. ed Collector current 100 m A 2.3±0.2 le sta ntinu Peak collector current 300 m A a e cyc isco Collector power dissipation 400 m W life d, d Junction temperature Tj °C n u duct type Storage temperature Tstg - 55 to +150 °C 2.5+- 00..26 2.5+- 00..26 1 23 1: Emitter 2: Base 3: Collector TO-92-B1 Package inte ntins followlianngefdoudris Pcroontinued - Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0 tinue anc Emitter-base cutoff current...