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Panasonic Electronic Components Datasheet

C4004 Datasheet

2SC4004

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Power Transistors
2SC4004
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
900
900
800
7
2
1
0.3
30
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
φ3.1±0.1
5.08±0.5
1.7±0.2
1.05±0.1
0.8±0.1
2.54±0.3
1.3±0.2
+0.2
0.5–0.1
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(b)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 900V, IE = 0
VEB = 7V, IC = 0
50 µA
50 µA
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
800
V
Forward current transfer ratio
hFE1
hFE2
VCE = 5V, IC = 0.05A
VCE = 5V, IC = 0.5A
6
3
Collector to emitter saturation voltage VCE(sat)
IC = 0.2A, IB = 0.04A
1.5 V
Base to emitter saturation voltage VBE(sat)
IC = 0.2A, IB = 0.04A
1.0 V
Transition frequency
Turn-on time
Storage time
Fall time
fT VCE = 10V, IC = 0.05A, f = 1MHz
ton
IC = 0.2A, IB1 = 0.04A, IB2 = – 0.04A,
tstg
VCC = 250V
tf
4 MHz
1.0 µs
3.0 µs
1.0 µs
1


Panasonic Electronic Components Datasheet

C4004 Datasheet

2SC4004

No Preview Available !

Power Transistors
40
(1)
30
20
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=5
30
10
3
1 TC=–25˚C
25˚C
100˚C
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
Cob — VCB
f=1MHz
TC=25˚C
30
10
3
1
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
1.2
TC=25˚C
1.0 IB=140mA
120mA
0.8 100mA
80mA
60mA
0.6
40mA
0.4
20mA
0.2
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SC4004
VCE(sat) — IC
100
IC/IB=5
30
10
3
100˚C 25˚C
1
0.3
0.1 TC=–25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
hFE — IC
VCB=5V
30
TC=100˚C
10 –25˚C
25˚C
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=10V
f=1MHz
TC=25˚C
30
10
3
1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=5
(IB1=–IB2)
10 VCC=200V
TC=25˚C
3
tstg
1
0.3 ton
0.1 tf
0.03
0.01
0
0.2 0.4 0.6 0.8
Collector current IC (A)
Area of safe operation (ASO)
10
3 ICP
1 IC
0.3
0.1
Non repetitive pulse
TC=25˚C
10ms
t=1ms
DC
0.03
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number C4004
Description 2SC4004
Maker Panasonic
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C4004 Datasheet PDF






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