• Part: C4359
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 206.98 KB
Download C4359 Datasheet PDF
Panasonic
C4359
Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) - High-speed switching 21.0±0.5 15.0±0.2 - High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 - Wide safe oeration area - Satisfactory linearity of forward current transfer ratio h FE - Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 e Collector-base voltage (Emitter open) VCBO V pe) Collector-emitter voltage (E-B short) VCES V nc d ge. ed ty Collector-emitter voltage (Base open) VCEO V sta tinu Emitter-base voltage (Collector open) VEBO V a e cycle iscon Base current A life d, d Collector current A n u duct type Peak collector current A te tin Pro ed Collector power dissipation W four ntinu Ta = 25°C 3.0 ing isco Junction temperature Tj °C in n follow ed d Storage temperature Tstg...