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Transistors
2SC4809
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency fT • Small collector output capacitance (Common base, input open cir-
0.2+–00..015 3
0.15+–00..015
0.8±0.1 1.6±0.15
1˚
0.2±0.1
cuited) Cob and reverse transfer capacitance (Common emitter) Crb • SS-Mini type package, allowing downsizing of the equipment and
(0.4)
automatic insertion through the tape packing
/ ■ Absolute Maximum Ratings Ta = 25°C
1
2
(0.5) (0.5)
1.0±0.1 1.6±0.1
5˚
Parameter
Symbol Rating
Unit
e e) Collector-base voltage (Emitter open) VCBO
15
(0.3)
0.75±0.15
V
c e. d typ Collector-emitter voltage (Base open) VCEO
10
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
0 to 0.1
0.45±0.