Satisfactory linearity of forward current transfer ratio hFE.
Dielectric breakdown voltage of the package: > 5 kV
1.4±0.2 1.6±0.2
2.6±0.1
/.
Absolute Maximum Ratings Ta = 25°C
0.8±0.1
0.55±0.15
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
500
13.7±0.2 4.2±0.2
Solder Dip
V
c e. d ty.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
C4953. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features • H...
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peed switching 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features • High-speed switching φ 3.2±0.1 15.0±0.5 • High collector-base voltage (Emitter open) VCBO • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV 1.4±0.2 1.6±0.2 2.6±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 0.8±0.1 0.55±0.15 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 500 13.7±0.2 4.2±0.2 Solder Dip V c e.
C4953 Datasheet
