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Panasonic Electronic Components Datasheet

C4953 Datasheet

2SC4953

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C4953 pdf
Power Transistors
2SC4953
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Dielectric breakdown voltage of the package: > 5kV
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
500
500
400
7
6
3
1.2
30
2.0
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
9.9±0.3
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 500V, IE = 0
VEB = 5V, IC = 0
100 µA
100 µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
400
V
Forward current transfer ratio
hFE1
hFE2
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
10
8 40
Collector to emitter saturation voltage VCE(sat)
IC = 1.5A, IB = 0.3A
1.0 V
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VBE(sat)
fT
ton
tstg
tf
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.2A, f = 1MHz
IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
VCC = 200V
1.5 V
10 MHz
1.0 µs
3.0 µs
0.3 µs
1


Panasonic Electronic Components Datasheet

C4953 Datasheet

2SC4953

No Preview Available !

C4953 pdf
Power Transistors
IC — VCE
5.0
TC=25˚C
4.5
IB=500mA
4.0 450mA
400mA
350mA
3.5 300mA
3.0 250mA
200mA
2.5
150mA
2.0 100mA
1.5
50mA
1.0
0.5
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
fT — IC
100
VCE=10V
f=1MHz
30 TC=25˚C
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3
Collector current IC (A)
1
Area of safe operation, reverse bias ASO
4.0
IC/IB=5
3.5 Lcoil=100µH
TC=25˚C
3.0
2.5
2.0
1.5
1.0
0.5
0
0 100 200 300 400 500 600 700 800
Collector to emitter voltage VCE (V)
2SC4953
IC — VCE(sat)
8
IC/IB=5
7
6 TC=–25˚C
25˚C
5
125˚C
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5
Collector to emitter saturation voltage VCE(sat) (V)
hFE — IC
300 VCE=5V
100
TC=125˚C
25˚C
30 –25˚C
10
3
0.003 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=10(2IB1=–IB2)
VCC=200V
10 TC=25˚C
3 tstg
1
ton
0.3
tf
0.1
0.03
0.01
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector current IC (A)
Area of safe operation (ASO)
100
Non repetitive pulse
Ta=25˚C
30 Ta=85˚C
10 ICP
3
IC 1s
t=1ms
10ms
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number C4953
Description 2SC4953
Maker Panasonic
Total Page 2 Pages
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