• Part: C5419
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 218.10 KB
Download C5419 Datasheet PDF
Panasonic
C5419
Features - High collector-emitter voltage (Base open) VCEO - High transition frequency f T 0.65 max. (1.0) 14.5±0.5 - Allowing supply with the radial taping - Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO V pe) Collector-emitter voltage (Base open) VCEO V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO V sta tinu Collector current 70 m A a e cle con Peak collector current lifecy d, dis Collector power dissipation - ICP 100 m A W n u duct type Junction temperature Tj °C te tin Pro ed Storage temperature Tstg - 55 to +150 °C four ntinu Note) - : Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 0.45+- 00..0150 2.5±0.5 1.05±0.05 2.5±0.5 0.45+- 00..0150 1: Emitter 2: Collector 3: Base MT-2-A1 Package in n s followliannged disco - Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ...