0.8max 1.0±0.2
1.0±0.1
2.5±0.1
q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO)
0.93±0.1
0.1±0.05 0.5±0.1
2.3±0.1 4.6±0.1
0.75±0.1
q Satisfactory linearity of foward current transfer ratio hFE
/ s Absolute Maximum Ratings (TC=25˚C)
1
2
3
1:Base 2:Collector 3:Emitter U Type Package
e ) Parameter
Symbol
Ratings
Unit
c type Collector to base voltage
VCBO
500
V
n d tage. ued VCES
500
5.5±0.2 1.8
V
s tin Collector to emitter vo.
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Power Transistors
2SC5457
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
6.5±0.1 5.3±0.1 4.35±0.1
Unit: mm
2.3±0.1 0.5±0.1
7.3±0.1 1.8±0.1
s Features
0.8max 1.0±0.2
1.0±0.1
2.5±0.1
q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO)
0.93±0.1
0.1±0.05 0.5±0.1
2.3±0.1 4.6±0.1
0.75±0.1
q Satisfactory linearity of foward current transfer ratio hFE
/ s Absolute Maximum Ratings (TC=25˚C)
1
2
3
1:Base 2:Collector 3:Emitter U Type Package
e ) Parameter
Symbol
Ratings
Unit
c type Collector to base voltage
VCBO
500
V
n d tage. ued VCES
500
5.5±0.2 1.8
V
s tin Collector to emitter voltage
le on VCEO
400
V
a elifecyc disc Emitter to base voltage
VEBO
7
V
13.3±0.
C5457 Datasheet
