• Part: C5517
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 200.68 KB
Download C5517 Datasheet PDF
Panasonic
C5517
Features - High breakdown voltage, and high reliability through the use of a glass passivation layer - High-speed switching - Wide area of safe operation (ASO) 5˚ (4.0) 5˚ 2.0±0.2 5˚ / 1.1±0.1 0.7±0.1 I Absolute Maximum Ratings TC = 25°C 5.45±0.3 e ) Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip c type Collector to base voltage VCBO 1 700 3.3±0.3 5.5±0.3 n d ge. ed Collector to emitter voltage VCES 1 700 (2.0) V sta tinu Emitter to base voltage VEBO V a e cle con Peak collector current A lifecy , dis Collector current A n u ct ed Base current A du typ Collector power TC = 25°C W te tin Pro ued dissipation Ta = 25°C 3 four ntin Junction...