• Part: C5592
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 229.66 KB
Download C5592 Datasheet PDF
Panasonic
C5592
Features 1.50- +00..0255 2.8- +00..32 - Low collector-emitter saturation voltage VCE(sat) 0.4±0.2 - High-speed switching - Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing (0.95) (0.95) 5˚ (0.65) 1.9±0.1 / - Absolute Maximum Ratings Ta = 25°C 2.90+- 00..0250 10˚ e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO V n d ge. ed Collector-emitter voltage (Base open) VCEO 0 to 0.1 1.1- +00..12 1.1- +00..13 V sta tinu Emitter-base voltage (Collector open) VEBO V a e cycle iscon Collector current A life d, d Peak collector current A n u duct type Collector power dissipation - PC 600 m W te tin Pro ued Junction temperature Tj °C four ntin Storage temperature Tstg - 55 to +150 °C wing disco Note) - : Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm Marking Symbol: 2T 1: Base 2: Emitter 3: Collector Mini3-G1 Package in n es...