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Panasonic Electronic Components Datasheet

D1640 Datasheet

2SD1640

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Power Transistors
2SD1640www.DataSheet4U.com
Silicon NPN epitaxial planar type darlington
For low-frequency output amplification
Features
High forward current transfer ratio hFE
Large peak collector current ICP
High collector-emitter voltage (Base open) VCEO
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
120
100
5
2
3
1.2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
123
0.5±0.1
1.76±0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Internal Connection
C
B
200
E
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1, 2
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
IC = 100 µA, IE = 0
IC = 1 mA, IB = 0
IE = 100 µA, IC = 0
VCB = 25 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 1 A
IC = 1.0 A, IB = 1.0 mA
IC = 1.0 A, IB = 1.0 mA
120
100
5
4 000
0.1
1
40 000
1.5
2.0
V
V
V
µA
µA
V
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Publication date: May 2003
SJD00209BED
1


Panasonic Electronic Components Datasheet

D1640 Datasheet

2SD1640

No Preview Available !

2SD1640
www.DataSheet4U.com
PC
Ta
1.6
Without heat sink
1.2
0.8
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
3.0
TC=25˚C
IB=180µA
2.5
150µA
2.0 120µA
90µA
1.5
60µA
1.0
0.5 30µA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE(sat) IC
IC/IB=1000
10
1 TC=100˚C
–25˚C
25˚C
0.1
0.01
0.01
0.1 1
Collector current IC (A)
VBE(sat) IC
IC/IB=1000
100
10
TC=–25˚C
1
100˚C
25˚C
0.1
0.01
0.1 1
Collector current IC (A)
hFE IC
105
VCE=10V
104 TC=100˚C
25˚C
103 –25˚C
102
10
0.01
0.1 1
Collector current IC (A)
10
Cob VCB
60
IE=0
f=1MHz
TC=25˚C
50
40
30
20
10
0
1 10 100
Collector-base voltage VCB (V)
Safe operation area
10
ICP
Single pulse
TC=25˚C
IC
1
t=10ms
t=100ms
t=1s
101
102
103
0.1 1 10 100
Collector-emitter voltage VCE (V)
Rth t
104 free air
103
102
10
1
101
104
103
102
101
1
10 102 103 104
Time t (s)
2 SJD00209BED


Part Number D1640
Description 2SD1640
Maker Panasonic
Total Page 3 Pages
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