D2345 - 2SD2345

Features

q High foward current transfer ratio hFE. q Low collector to emitter saturation voltage VCE(sat). q High emitter to base voltage VEBO. q Low noise voltage NV. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 50 40 15 100 50 125 125.
55 ~ +125 Unit V V.

D2345 2SD2345 by Panasonic - Datasheet Preview — Datasheet preview – D2345

Datasheet Details

Part number	D2345
Manufacturer	Panasonic
File Size	37.28 KB
Description	2SD2345
Datasheet	D2345 Datasheet
Additional preview pages of the D2345 datasheet.

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Full PDF Text Transcription

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Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification s Features q High foward current transfer ratio hFE. q Low collector to emitter saturation voltage VCE(sat). q High emitter to base voltage VEBO. q Low noise voltage NV. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 50 40 15 100 50 125 125 –55 ~ +125 Unit V V V mA mA mW ˚C ˚C 0.2–+00..015 Unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 1 3 2 1.6±0.1 1.0±0.1 0.5 0.5 0.15–+00..015 0.75±0.15 0.45±0.1 0.3 0 to 0.1 0.2±0.

Published: Jul 8, 2016 |