High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. www. DataSheet4U. com
q q
1.5 R0.9 R0.9
0.4
1.0±0.1
R
0.
0.85
(Ta=25˚C)
Ratings 60 50 7 200 100 400 150.
55 ~ +150 Unit V V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2 1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base volta.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
D637. For precise diagrams, and layout, please refer to the original PDF.
Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features High fowar...
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±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. www.DataSheet4U.com q q 1.5 R0.9 R0.9 0.4 1.0±0.1 R 0. 0.85 (Ta=25˚C) Ratings 60 50 7 200 100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.
D637 Datasheet
