Panasonic Electronic Components Datasheet

DB2J20600L Datasheet

Silicon epitaxial planar type

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DReovcisNioon. . T2 T4-EA-13097

DB2J20600L

Silicon epitaxial planar type

For high frequency rectification

DB2X206 in SMini2 type package

 Features

 Low forward voltage VF

 Small reverse leakage current

 Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)

 Marking Symbol: D3

 Packaging

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

 Absolute Maximum Ratings Ta = 25 C

Parameter

Symbol

Rating

Reverse voltage

VR 20

Repetitive peak reverse voltage

VRRM

Forward current (Average) *1

Non-repetitive peak forward surge current *2

Junction temperature *1

Operating ambient temperature

IF(AV)

IFSM

Topr

150

-40 to +85

Storage temperature

Tstg -55 to +150

Note: *1 Tl = 80 °C

*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)

Unit

°C

Product Standards

Schottky Barrier Diode

DB2J20600L

1.25

0.35

Unit: mm

0.13

0.5

0.7

1. Cathode

2. Anode

Panasonic

JEITA

Code

SMini2-F5-B

SC-90A

―

Internal Connection

Established : 2011-06-14

Revised : 2013-04-20

Page 1 of 4

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Panasonic Electronic Components Datasheet

DB2J20600L Datasheet

Silicon epitaxial planar type

No Preview Available !

DReovcisNioon. . T2 T4-EA-13097

Product Standards

Schottky Barrier Diode

DB2J20600L

 Electrical Characteristics Ta = 25 C  3 C

Parameter

Symbol

Conditions

Min Typ Max Unit

Forward voltage

VF IF = 1.0 A

0.45 V

Reverse current

IR VR = 20 V

100 μA

Terminal capacitance

Ct VR = 10 V, f = 1 MHz

20 pF

Reverse recovery time *1

trr IF = IR = 100 mA, Irr = 0.1 × IR

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on

the charge of a human body and the leakage of current from the operating equipment.

3. *1 trr test circuit

Bias Application Unit (N-50BU)

Pulse Generator

(PG-10N)

Rs = 50 Ω

Wave Form Analyzer

(SAS-8130)

Ri = 50 Ω

Input Pulse

tr tp

10%

VR 90%

tp = 2 μs

tr = 0.35 ns

δ = 0.05

Output Pulse

trr

Irr = 0.1 × IR

IF = 100 mA

IR = 100 mA

Established : 2011-06-14

Revised : 2013-04-20

Page 2 of 4

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DB2J20600L Datasheet

Silicon epitaxial planar type

DB2J20600L Datasheet

Silicon epitaxial planar type

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