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FG694301 Datasheet Silicon N-/P-channel MOSFET

Manufacturer: Panasonic

Overview

This product complies with the RoHS Directive (EU 2002/95/EC).

FG694301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits  Overview FG694301 is N-P channel dual type small signal MOS FET employed small size surface mounting package.

Key Features

  • s.
  • Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V) / 4 W (VGS =.
  • 4.0 V).
  • High-speed switching.
  • Small size surface mounting package: SSMini6-F3-B.
  • Contributes to miniaturization of sets, reduction of component count.
  • Eco-friendly Halogen-free package.
  • Packaging Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Drain-source surrender voltag.